commit some rectified things

docs/JY_FENG/Semiconductor Physics and Devices/1 The Crystal Structure of Solids.md

@@ -0,0 +1,212 @@
+# 1 The Crystal Structure of Solids
+
+## 1.0 Preview
+
+In this chapter, we will:
+■ Describe three classifications of solids—amorphous 非晶体, polycrystalline 多晶体, and single crystal.
+■ Discuss the concept of a unit cell.
+■ Describe three simple crystal structures and determine the volume and surfacedensity of atoms in each structure.
+■ Describe the diamond crystal structure.
+■ Briefly discuss several methods of forming single-crystal semiconductor materials.
+
+## 1.3 Space Lattices
+
+*lattice point* 晶格点
+
+*unit cell* a small volume of the crystal that can be used to reproduce the entire crystal
+
+*primitive cell* the smallest unit cell that can be repeated to form the lattice.
+
+### 1.3.2 Basic Crystal Structures
+
+#### Volume Density of Atoms
+
+1.5 (b)
+$$
+\frac1{8}\times8+1=2\\
+Volume\space Density=\frac{\#atoms\space per\space unit\space cell}{volume\space of \space unit\space cell}={2\over a^3}
+$$
+
+#### Three lattice types: 
+
+![image-20240404233603766](./assets/image-20240404233603766.png)
+
+(a) simple cubic, (b) body-centered cubic, (c) face-centered cubic.
+
+### 1.3.3 Crystal Planes and Miller Indices
+
+surface matters a lot
+
+the intercepts of the plane 平面的截距
+
+#### Miller indices 
+
+hkl plane
+
+![image-20240404234517741](./assets/image-20240404234517741.png)
+
+取截距倒数？the use of infinity is avoided
+
+take the reciprocal（倒数） of the intercepts（截距）
+
+distance between nearest equivalent parallel planes
+
+surface concentration
+
+#### surface density
+
+![image-20240404235422381](./assets/image-20240404235422381.png)
+
+### 1.3.4 Directions in Crystals
+
+[1,1,1]平面法向量
+
+## 1.4 The Diamond Structure
+
+tetrahedral 四面体
+
+![image-20240404235735774](./assets/image-20240404235735774.png)
+
+![image-20240404235924203](./assets/image-20240404235924203.png)
+
+#### zincblende (sphalerite) structure
+
+![image-20240405000105070](./assets/image-20240405000105070.png)
+
+## 1.5 Atomic Bonding
+
+qualitative understanding
+
+valence electrons 价电子
+
+ions 离子
+
+coulomb attraction 库伦吸引
+
+
+
+#### ionic bond 离子键
+
+NaCl
+
+#### covalent bonding 共价键
+
+H~2~
+
+the outer silicon atoms always have valence electrons available for additional covalent bonding - infinite structure
+
+#### metallic bonding 金属键
+
+#### Van der Waals bond 范德华~
+
+nonsymmetry - small electric dipole - interact with each other
+
+
+
+## 1.6 imperfections and impurities in solids
+
+electrical parameters
+
+### 1.6.1 imperfections in solids
+
+atomic thermal vibration
+
+##### lattice vibration
+
+thermal energy(function of temperature) - atom randomly fluctuate
+
+##### point defect 
+
+lack of an atom - **vacancy**
+
+<img src="./assets/image-20240410102423914.png" alt="image-20240410102423914" style="zoom:33%;" />
+
+多了一个 **interstitial**
+
+* **Frenkel defect**
+
+##### line dislocation
+
+### 1.6.2 impurities in Solids
+
+##### lattice defects
+
+*substitutional* impurities
+
+*interstital* impurities
+
+![image-20240410103330800](./assets/image-20240410103330800.png)
+
+##### doping (参杂原子)
+
+* impurity diffusion
+
+  high temperature - vacancy - impurity partical move from high concentration to lower - low down the temp
+
+* ion implantation
+
+  low temp - ions be accelerated
+
+  defect: lattice displacement damage
+
+  solve: thermal anneal 热退火
+
+
+
+## 1.7 growth of semiconductor materials
+
+### 1.7.1 growth from a melt
+
+#### Czochralski Method（Growth）
+
+seed - the same material in liquid phase - pulled - bigger
+
+#### zone refining（Purify）
+
+At the solid–liquidinterface, there is a distribution of impurities between the two phases. The parameter that describes this distribution is called the **segregation coefficient**: the ratio of the
+concentration of impurities in the solid to the concentration in the liquid. 
+
+r-f coil 射频线圈
+
+#### 切割
+
+flat（110）plane
+
+#### polish
+
+chemecal etch
+
+### 1.7.2 Epitaxial Growth
+
+外延生长
+
+single-crystal substrate
+
+*homoepitaxy* one material
+
+*heteroepitaxy* e.g. Growing epitaxial layers of the ternary alloy AlGaAs on a GaAs substrate
+
+#### CVD chemical vapor-phase deposition
+
+chemical reaction release material atom to deposit on the material
+
+#### Liquid-phase epitaxy
+
+melt temp lower than the semiconductor itself
+
+practiced at low temp (III-V)
+
+#### Molecular Beam Epitaxy
+
+vacuum iat temp 0f 400-800
+
+semiconductor and dopant atoms evaporated onto the surface of the substrate
+
+## 1.8 Summary
+
+**substrate** A semiconductor wafer or other material used as the starting material for further semiconductor processing, such as epitaxial growth or diffusion.
+
+**ternary semiconductor** A three-element compound semiconductor, such as aluminum gallium arsenide (AlGaAs).
+
+**elemental semiconductor** A semiconductor composed of a single species of atom, such as silicon or germanium.
+